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| MRAL1720-9 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRAL1720-9 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications up to 2.0 GHz. PACKAGE STYLE 250 2L FLG C FEATURES: * Diffused Ballast Resistors. * Internal Matching Network * OmnigoldTM Metalization System B E B MAXIMUM RATINGS IC VCES VEBO TJ TSTG JC 4.0 A (CONT) 42 V 3.5 V -65 C to +200 C -65 C to +150 C 4.5 C/W CHARACTERISTICS SYMBOL BVCES BVEBO ICBO hFE Cob GPB c IC = 80 mA IE = 1.0 mA VCB = 22 V TC = 25 C NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 42 3.5 2.0 V V mA --pF dB % 100 12 6.5 40 VCE = 5.0 V VCB = 28 V VCE = 22 V IC = 400 mA f = 1.0 MHz Pout = 9.0 W f = 1.7 GHz & 2.0 GHz 10 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1 |
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